Research On Nonlinear Mode Jitter Triggering Test And Superposition Precision Of Gallium Arsenide Photoconductive Semiconductor Switches

Gallium arsenide photoconductive semiconductor switches(GaAs PCSS)has been widely applied in various fields due to its excellent photoelecrtic propertie.Nowadays,many systems require multiple parallel photoconductive semiconductor switches to discharge simultaneously in ord to maximize output power and operate properly of GaAs PCSS.This multiple parallel photoconductive semiconductor switches operation mode calls for high precision synchronous control system.Therefore,it is necessary to reduce the individual jitter time of the photoconductive semiconductor switch to a minimum.When GaAs PCSS works in linear mode,its jitter time is very small,and the jitter time test under this mode has achieved some research results.Based on the improved method of testing jitter time and the theory of error transfer,the jitter time and superposition precision of GaAs PCSS in nonlinear working mode are studied for the first time.The gap between the photoconductive semiconductor switches electrodes used in the experiment is 3mm,and GaAs PCSS is triggered by the optical pulse with a wavelength of 532nm and an energy of 9μJ.The results show that the jitter time presents Gauss distribution with the increase of bias electric field.When the bias field is less than 13.0kV/cm,the photoconductive semiconductor switches works in a linear mode,and the jitter time is less than 120.0ps.When the bias field increases to 16.67kV/cm,the photoconductive semiconductor switches go into the nonlinear mode,and the jitter time increases when compared with the linear mode.When the bias electric field is 18.0kV/cm,the maximum jitter time value is 590.85ps,and the time jitter will decrease when the nonlinear working mode of the photoconductive semiconductor switches is stable,and the jitter time is reduced to 172.0ps at 20.0kV/cm.It is found that the variation of the jitter time with the bias electric field is related to the negative differential conductance.At the same time,we studied the superposition precision of the two parallel photoconductive semiconductor switches.In order to better describe the superposition precision,we introduced the definition of the superposition efficiency.The optical pulse wavelength used in the experiment is 1064nm,the energy is 30.0μJ and the pulse width is 10.0ns.The result shows that when the bias voltage is less than 3.0kV,the superposition effect is more than 85%,but when the bias voltage is 5.5kV,the superposition efficiency is only 67.1%.It is pointed out from the analysis that the difference of the superposition efficiency is related to the reflection of the transmission line.