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Study On The Performance Improvement And Reliability Of Amorphous Carbon RRAM Device

Posted on:2019-02-26Degree:MasterType:Thesis
Country:ChinaCandidate:X H LiFull Text:PDF
GTID:2428330563453542Subject:Condensed matter physics
Abstract/Summary:PDF Full Text Request
The traditional silicon floating-gate memory has approached the theoretical limit with the semiconductor technology breaking through 22 nm and moving towards a smaller direction.The resistive random access memory(RRAM)is considered to be a promising candidate for next generation of non-volatile memory owing to its advantages of simple structure,high integration,low power consumption,and has the potential of multi-value storage.More importantly,it integrates the advantages of memory and hard disk,and has characteristics of non-volatile and high-speed rewritable.RRAM has a simple structure of metal/insulator/metal(M/I/M).It are used to store data to use the formation and break of conductive filament in insulation layer.However,the application of RRAM is still facing the problem that the resistive switching mechanism is unclear and the resistive switching performance is not reliable.Thus,studying the formation mechanism of conductive channels and how to effectively control the size of conductive channels can further promote the development of RRAM.In addition,the selection of insulating layer resistive materials is a key research topic in this field.Resistance switching behavior is found in many materials,such as: metal oxides,solid electrolytes,organic materials,amorphous materials.Carbon-based materials are considered as the most promising materials to replace silicon because of their special electrical and mechanical properties.Therefore,the amorphous carbon(a-C),owing to larger resistivity in carbon-based materials,is used as the insulating layer resistive switching material in this paper.We explored the mechanism of resistive switching and the improvement of the resistive switching performance.The details research are as follows:Firstly,we constructed a simple MIM(Pt/a-C/Ag)structure device and test its I-V characteristic curve.Here,resistance switching parameters are variable and the resistance switching behavior is not reliable.In order to explore the main reason for the resistance variable parameters,the real-time current is monitored during the set process of the device.We found that the main reasons for the instability of the resistive switching parameters is the presence of parasitic capacitance-induced overshoot currents,which can lead to excess growth of conductive filament in RRAM.Then,the Pt/a-C/AIST/Ag structure device was prepared,and a buffer layer was formed by inserting AgInSbTe(AIST)alloy thin film material between the silver electrode and the aC resistance layer.After optimization,the conductive filament of the RRAM was more controllable,and resistance switching performance is improved.The device's resistive performance.To further explore the mechanism of resistance change,it was found that the AIST buffer layer not only suppresses the parasitic capacitance-induced overshoot current,but also effectively inhibits the excessive growth of the conductive channel.In turn,a more reliable amorphous carbon resistive device was obtained.Afterwards,a Pt/aC/AIST/Ag structure device was prepared and a buffer layer was formed by inserting silver indium gallium(AIST)alloy thin film material.By optimization,the conductive path of the resistive switching device was more controllable,and the amorphous carbon resistance was improved.To further explore the mechanism of resistance change,it was found that the AIST buffer layer not only suppressed the parasitic capacitance-induced overshoot current,but also effectively limited the excessive growth of the conductive channel.Therefore,a reliable a-C resistive switching device was obtained.Finally,we conducted a special environmental test for the optimized device.The resistance switching behavior of the device is tested after irradiation environments,which demonstrated the anti-radiation capability of the device to expand the application of a-C materials RRAM device.
Keywords/Search Tags:Resistive random access memory, amorphous carbon material, overshoot current, performance improvement
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