Photo-electromechanical Coupling Properties And Damage Behavior Of Single GaN Nanobelt Piezoelectric Memristor

Due to its excellent electrical and optical properties,such as high band gap,corrosion resistance,high electron mobility,etc.,GaN material is very representative of the third-generation semiconductor materials,and it is an excellent material for fabricating micro-nano devices and sensors.With the highly integrated development of various electronic components,micro-nano devices such as piezoelectric transistors,photodetectors,sensors,force switches,and logic computing devices based on one-dimensional GaN have been reported internationally.High-quality GaN materials are of great significance for their application in the field of micro-nano devices.Currently,due to its simple operation and controllability,chemical vapor deposition(CVD)has been widely used in the preparation of one-dimensional nanomaterials,such as GaN.However,there are a few reports about GaN nanoribbon memristors on GaN-based micro-nano devices.The photo-electromechanical coupling performance and the electromechanical damage behavior have been rarely studied for single GaN nanoribbon.In this paper,GaN nanoribbons are synthesized via CVD,and a new type of GaN nanoribbon memristor with out-of-plane structure was successfully constructed by conductive atomic force microscopy(C-AFM).The memory performance,electromechanical performance and photo-electromechanical coupling performance of the memristor were also tested.In addition,the electromechanical damage and failure behavior of a single GaN nanoribbon were studied in situ by conductive atomic force microscopy.The main contents and results of this paper are as follows.1.A novel out-of-plane GaN nanoribbon memristor was constructed by C-AFM,and the memristor was found to have obvious resistive behavior and nonvolatile memory performance from the I-V characteristic and I-T characteristic of the memristor.Then the electromechanical performance of the memristor was studied,and the results indicate that the loading force can not only regulate the current transport characteristics of the memristor,but also the SET voltage,RESET voltage of the memristor and the size of its window.2.The photo-electromechanical control performance of GaN nanoribbon memristor was studied by combining external light source and C-AFM,and the results show that the current transport of the memristor can be regulated by external light source and loading force jointly.The above experimental results were described and analyzed,and reasonable explanations were given at the same time.3.The electromechanical damage behavior of a single GaN nanoribbon was studied by C-AFM,and it was found that nano-damage occurred around the contact point between the probe tip and the nanoribbon.There are pits at the contact point and bulges around the contact point,and with the increase of loading force,the threshold voltage at which damage occurs will decrease significantly.