The Controllable Synthesis And Photoelectric Detection Properties Of Low Dimensional ZnO And Ga₂In₄S₉ Materials

Photodetector devices have important applications in video imaging,optical communications,biomedical imaging,gas sensing,and military applications.Low-dimensional nanostructures have become ideal building blocks for high-performance photodetectors due to their high surface area-to-volume ratio and excellent physicochemical properties.Therefore,this article focuses on the optimization of low-dimensional traditional semiconductor nanomaterial photodetector device properties and the development of new low-dimensional photodetector semiconductor materials,the main research contents are as follows:The ZnO/CH₃NH₃PbI₃ heterojunction was constructed by spin coating,and the photodetector performance of low-dimensional ZnO nanomaterials was optimized through the regulation of energy band structure.Ultraviolet-visible（UV-Vis）absorption spectra showed that the optical absorption range of ZnO/CH₃NH₃PbI₃ material broadens to 760 nm,and the ZnO/CH₃NH₃PbI₃ hybrid structures reveal a distinguished photoelectric performance under the illumination of 380 nm with larger switching ratio,faster response-recovery time,higher responsivity and external quantum efficiency.This improved light sensing performance can be attributed to the good ambipolar charge transport at the perovskite/ZnO interface and a relative long diffusion length in the perovskite layer.In addition,the flexible device was fabricated based on ZnO/CH₃NH₃PbI₃ hybrid structures,such photodetectors demonstrate good flexibility and stability after extremely bending 200 cycles.Using an improved deposition method assisted with liquid gallium/indium eutectic alloy,we first realized the high-quality 2D ternary n type Ga₂In₄S₉ flakes down to several atomic layer thickness and their device applications has been systematically explored.The photoluminescence spectrum shows that the near-band edge emission peak at 357 nm is more intense at low temperatures.The initial photodetectors designed on Ga₂In₄S₉ flakes display an outstanding ultraviolet detection ability(R_λ=85.43 AW^-1,EQE=2.65×10⁴%,D*=2.76×10¹22 Jones@360 nm)with fast response time.In addition,under the synergistic effect of the back gate and illumination,Ga₂In₄S₉-based phototransistors exhibit a responsivity up to¹0⁴ AW^-1.The mentioned excellent optoelectronic may originate from the large minority carrier diffusion length and a low recombination rate in Ga₂In₄S₉channels.