Study Of Quantum Well Intermixing In Active Area Of 642nm Red Laser

With the rapid development of laser display technology, the demand for high-performance red laser light source has increased urgently. The GaInP quantum well with tensile strain obtain red light with shorter wavelength, but it is affected by the optical disaster damage effect more seriously, so the photoelectric characteristics and reliability are facing challenges. The non-absorption window structure can effectively suppress the damage caused by the light absorption of the cavity surface, it is a convenient and reliable method to fabricate the non-absorption window by the hybrid technology of quantum well, and has a good application potential.In this paper, the experimental study on the quantum well hybridization of active region of 642 nm red laser is mainly described. In the experiment, the epitaxial structure of 642 nm red laser was grown by MOCVD, and the active region is Ga0.65In0.35P double quantum well with 9 nm thick. Two methods of ion implantation and impurity diffusion were used to induce quantum well confinement. Achieving the ion implantation induced mixed, a rapid post-annealing process to accelerate the intermixing process is need, at the same time, it is necessary to epitaxially grow ZnO thin films to provide impurity source when the impurity diffusion method in the induction of mixed.In the ion implantation induced intermixing, N ions were implanted in the epitaxial structure of 642 nm red laser with the surface GaAs ohmic contact layer removed with low energy bio-modified ion implantation. The implantation energy was 40 KeV and the dose was le17 ions/cm ; after the ion implantation, the samples were annealed to accelerate the process of quantum well intermixing. The annealing temperature was 730? and the annealing time was 60 s-300 s, the step was 60 s. It was found that all the samples had wavelength blueshift,and the blueshift increased with the increase of annealing time, and the maximum wavelength blue shift of 24.7 nm was obtained at 300 s annealing time. It has also been found that annealing can adversely affect the crystals quality and surface morphology of the red LD.In the impurity diffusion induced intermixing, firstly, the ZnO thin films were grown on GaAs substrates by magnetron sputtering; then the most suitable sputtering parameters were obtained according to the test results (The sputtering power is 70 W, sputtering pressure is 1.5 Pa, argon-oxygen ratio is 20sccm: 10sccm,and substrate temperature is room temperature); and the ZnO thin films were sputtered on the epitaxial structure of 642 nm red laser with the surface GaAs ohmic contact layer removed; finally, the high temperature annealing at 600? was used to prevent the Zn impurity into the epitaxial structure of the 642 nm red laser, the annealing time was 1min-240min. It was found that the surface roughness of the sample increased with the increase of annealing time.