Research Of Terahertz Wave Communication Based On Radio Over Fiber Technology And THz Modulator

Due to the special frequency band, terahertz wave applied in the field of wireless communications have a distinct advantage. Relative to microwave communications, terahertz communications technique has faster data transfer rate, furthermore, and a better ability to transmit signals in a harsh environments compared with optical wireless communications technique. Terahertz wave communication will become an important communication technique in the future because of its unique advantages. Research of THz modulation techniques have three main route, RF signal mixer+octave modulation, ToF optical modulation, terahertz external modulator. This article will research ToF optical modulation technology roadmap and terahertz external modulator technology roadmap.ToF technology roadmap is developed based on RoF optical communication technique. After analyzed performance and role of the main components, we used simulation methods to research ToF optical modulation, not only used MZM+MZM and MZM+FBG two different techniques roadmap to achieve the RF signal4octave and generate terahertz wave of optical carrier, but also used of MZM to modulate10Gbps data signal.We studied terahertz modulator based on SRR Metamaterial structures adopted simulation and experimental methods. We used simulation methods to study the various parameters of SRR structure, polarization properties and absorption properties of different metal structures, such as Tian font, Ri font, isosceles triangle structure. Firstly we used OPTP system to verify the simulation results. Then, studied the terahertz waves absorption intensity under different pump light intensity, found that the modulation depth of Tian font can be achieved73.15%and isosceles triangle structure can reach81.19%which ignored the effects of photo-generated carriers. Finally, studied the time characteristic of the Ri font modulator and found that the time characteristic of the SRR structure modulator is mainly determined by the semiconductor material, the time that equivalent capacitance changed can be substantially ignored.