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Research On Structures Of Non-injection Regions Near Cavity Facets Of High Power Laser Diodes

Posted on:2015-10-05Degree:MasterType:Thesis
Country:ChinaCandidate:S ZhangFull Text:PDF
GTID:2298330452953278Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Semiconductor lasers have many advantages such as small size, low powerconsumption, long lifetime, high electro-optical conversion efficiency, widewavelength coverage, cheap price and so on. They are widely used in many fieldssuch as optical fiber communication, laser storage, laser display, laser marking,machining, biomedical and military. With the continuous expansion of practicalapplication, the performance of high-power semiconductor lasers has been putforward higher requirements. Improving the output power and beam quality ofsemiconductor lasers has been an important research direction of the semiconductorlaser.Driven by the optical fiber laser pumping and direct semiconductor laserprocessing, the demand for high-power single emitter semiconductor lasers is growingrapidly. In this paper, the976nm high-power single emitter semiconductor laser usedin fiber-coupled is studied. Through theoretical analysis and experimental verification,in order to achieve a continuous output power of12W, a976nm high-power singleemitter semiconductor structure with100μm strip width,4000μm cavity length andasymmetric large optical cavity waveguide is designed and fabricated. Meanwhile, inorder to improve the catastrophic optical damage (COD) threshold of single emittersemiconductor laser, non-injection regions near cavity facets are studied. Byintroducing non-injection regions with25μm length near cavity facets, no carriers aresupplied to the facet regions by current injection. Moreover, a novel structure ofnon-injection regions near cavity facets is introduced. Ridge waveguide is employedin non-injection regions, which improves the COD threshold and narrows thehorizontal far field divergence angle. The main contents of this paper are as follows:(1) The976nm semiconductor laser wafer with asymmetric large optical cavitywaveguide structure is designed and fabricated, in which the large optical cavitystructure is used to raise the COD limit, and the asymmetric waveguide is used toinhibit the lasing of higher order modes.(2) Through theoretical analysis and experimental verification, the deviceparameters and preparation process of976nm high-power single emittersemiconductor laser are identified. The device fabricated under this preparationprocess is tested and analyzed. (3) In order to improve the COD threshold of single emitter semiconductor laser,non-injection regions with25μm length are introduced near cavity facets.Non-injection regions are manufactured by dielectric passivation near cavity facetsand etching the p+-GaAs layer near cavity facets, and devices fabricated with thisstructures are tested and analyzed.(4) To solve the problem that the horizontal far field divergence angle of thedevice with non-injection regions fabricated by etching the p+-GaAs layer near cavityfacets is too large, a novel structure of non-injection regions near cavity facets withridge waveguide is introduced.
Keywords/Search Tags:high-power semiconductor laser, non-injection region, ridge waveguide, catastrophic optical damage (COD), divergence angle
PDF Full Text Request
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