Based On The Graphene Channel Of The Manufacturability Of The Field Effect Transistor

Transistor is a key active component of modern electronics, and it promotes theevolution of modern electronics, especially in computer technology. As a kind oftraditional materials of interfacial layer, SiO2became the obstacle of computing speedimprovement. And its processing limit determined that the thickness of SiO2interfaciallayer is hard to be reduced to5nm. Recently fellows discovered a brand new carbonallotrope, named graphene, which has a broad application prospects. It is a twodimension thin film, owning excellent characteristics in electronic and physicalproperties, and the thickness of single layer graphene is only0.33nm.This paper discussed the process and device performance of graphene MOSFET bysemiconductor simulation software-Technology Computer Aided Design (TCAD),which is applied to study the manufacture process and device performance of graphenebased MOSFET, and get a reasonable model by adjust the controllable processparameters. The transistor model is based on the SiC substrate for omitting the transferstep so that to reduce the problems of bringing in impurities. The graphene basedtransistor is improving quickly for it contains a great potential in development of thecalculation speed of transistors. Fellows believe that graphene MOSFET must be ahighlight to continue the legend of Moore’s Law. The performance results of simulationin current-voltage and characteristic frequency parameters indicated the excellentfunctions and huge potential improvement of graphene MOSFET.