Study On Preparation And Properties Of Transparent ZnO Ultraviolet Photoelectric Detector At Room Temperature

Semiconductor UV photodetectors have been widely used in many fields such as civilian and military in recent years, which spark a great interest in the study. Because of the excellent optical and electrical properties, ZnO has broad application prospect in the field of UV photodetectors. How to meet the demands of the device functionality while reducing the production cost has been one of research directions of ZnO-based ultraviolet photodetectors.This paper proposed a new idea of preparing the photodetectors on the low price, ordinary glass substrate, focused on the preparation of ZnO UV photodetector and the research of its photoelectrical properties, involving not only the preparation and characterization of ZnO thin film itself but also the preparation and characterization of the UV photodetector. This paper work is meaningful in the fields of optoelectronic devices.This dissertation firstly chose magnetron sputtering method because of its simple process and the characteristic of easy to control to prepare ZnO thin film on the glass substrate, and used XRD and PL means to analyze the quality of the films prepared under different technical parameters. By analyzing the features of comparative XRD diffraction peak intensity, the FWHM, the grain size and strength of the spectrum peak caused by the defect, the paper studied the effects of different sputtering power, sputtering pressure and the influence of annealing treatment.This paper proceeded by preparing the MSM ultraviolet photodetector on the mentioned ZnO thin film above, exploring the effects of different function metal electrodes, annealing atmosphere, and different mask. The performance tests included I-V characteristic, the ratio of light to dark current, the photoresponse and the rejection ratio of ultraviolet to visible light.As a result, ZnO-based low-cost UV photodetectors showed good performance, with the transmittance more than 90% in the visible region and it was realized to achieve a practical ZnO-based photodetectors on glass substrates. The paper greatly reduced the cost while ensuring the performance. The work carried out has a certain sense for applying the ZnO in the optoelectronic field.