Experimental Investigation On Tunable 780 Nm Single Mode Narrow Line-width Laser In New Type Rb Atomic Clock

This thesis carries out several of experimental studies on the 780nm single mode, narrow line-width tunable semiconductor laser. The 780nm semiconductor laser is corresponding to the Rb D2 spectral line. As investigation of the ultra fine structure of Rb atom energy-level, we need a single mode narrow line width semiconductor laser. But the laser which on sales in market have certain insufficiency in some aspects such as the single mode type, the line-width of emission, and also price, etc. So, it is the most important question to develop this kind of semiconductor laser.In this thesis, firstly, the optical grating extra cavity semiconductor laser's principle is introduced, the semiconductor laser's the narrowing line-width methods and how to choose of laser optical grating extra cavity feedback structure are simultaneously analyzed. Then, technical key points in develop the laser including the sealing of components, the threshold value, the harmonious principle are concluded. Thirdly, the 780nm semiconductor laser's optical component, the mechanical part design, the electrical circuit design are given. And tests on the laser's optical performance like wavelength, the facular quality and mode, the fluorescence signal, the beat frequency signal are carried out; the electricity characteristic of self-made laser system like potential source, the current supply, and controlled the module are also given. Finally, the testing on whole laser system has carried. In additional, the self-made optical wavelength meter is introduced including design principle, the path of rays layout, mechanical part design. With this meter, the wavelength of He-Ne laser(632.98 nm, 543.52 nm), self-made semiconductor laser(780.28 nm) are measured. The results show that parameters of self-made wavelength meter is comparable with wavelength meter from High Finess WS-6.