Fabrication And Study Of ZnO UV Photodetector

Zinc oxide, a kind of semiconductor material with a direct wide band gap (3.37eV at room temperature), has substantial advantages including large exciton binding energy (60meV) and excellent piezoelectric and photoelectric capability, these advantages make it become a focus in photoelectric research field after GaN. ZnO has popular application on civil and military fields, such as ultraviolet detectors, surface acoustic wave device, light-emitting diodes (LEDs), laser diodes (LDs), transparent electrodes.We have used MOCVD method in the substrates that developed ZnO thin film and its related properties were studied. We compared with the thin film under different conditions. First of all, the growth temperature is optimized, results and analysis show that the growth of ZnO at 400℃have the best crystallization of thin films and electro optical characteristic.This thesis are based on ZnO films grown by MOCVD. We have successfully designed and fabricated ZnO inter digital (IDT) Metal-Semiconductor-Metal ultraviolet photodetector. The performance of the device was tested and analyzed. IV curve shows a ositive bias current under illumination and dark current increases linearly with the applied bias voltage, light current and dark current have great differences. Spectrum response curves show that the UV-sensitive detector, the peak resonse at 375nm in the vicinity.