| New optical and optoelectronic devices require properties of thin films which are not possible to be achieved by using existing materials. Mixing two or more materials allows the possibility to change many properties of the thin films, such as refractive index, extinction coefficient, microstructure, stress, resistively, surface roughness, etc. TiO2-Ta2O5 thin films are new-style optical thin films that made of uniform mixing compound as starting material. It has been widely used in anti-reflection coatings, interference filters, DRAM devices, photochemical catalysis etc. There are large science and application values to study the structure and properties of TiO2-Ta2O5 thin films.The (1-x)TiO2-xTa2O5 compound thin films were prepared by IAD on K9 glasses with Ta2O5 and TiO2 of different proportioning as starting materials, the deposition parameters are shown below: the base pressure were (2-3)×10-3Pa; the substrate temperatures were 200℃; the deposition rates were 5A|°/s; oxygen flux were 18sccm; the thickness of films were 300nm; post-annealing of thin films was run under air condition at 500℃for 2 hour, and cooled with furnace cooling. The crystal structure and surface morphology is determined by XRD and AFM, respectively. The structure of (1-x)TiO2-xTa2O5 films are amorphous as deposition, after annealing the structure is anatase crystallized, and the crystallinity is decresed with increasing Ta2O5 content, it was observed that Ta2O5 retarded amorphous-to-anatase transformation; the magnitude order of grain size are all nanometer, and the grain size normal to plane (101) are reduced with increasing Ta2O5 content; the growth formation of all the films are like columniation, the average size and the surface roughness decreased gradually with increasing Ta2O5 content; after annealing average grain size of thin films is larger than that of before annealing.Transmittance spectra of thin films were measured by spectrophotometer, optical constants of the films have been calculated by the envelop method. The indirect band gap can be determined by Tauc relationship. The average transmittance is high within visible light region and enhanced with increasing Ta2O5 content; the refractive index varies from 1.80 to 2.07, the magnitude order of extinction coefficient is about 10-3~10-4; before annealing the optical band gap of films increased from 3.266eV to 3.417eV along with the content of Ta2O5 enhanced from 0 to 20%; after annealing the optical band gap of films increased from 3.227eV to 3.512eV along with the content of Ta2O5 enhanced from 0 to 20%, the optical band gap and the grain size of the films are accord with Kayanuma model. |