Chemical modification of silicon surfaces for shallow doping and growth of thin films

Silicon remains the most important material for a host of applications including electronics, sensors, and even energy. Consequently, the modification of its surfaces and the ability to integrate other materials by thin film deposition are important. This proposal addresses two specific issues to help control these important processes. The first is the grafting of organic molecules and the subsequent use of these self-assembled monolayers to attempt to obtain shallow doping in silicon. This constitutes a novel approach that needs to be demonstrated and tested. The second is the deposition (or growth) of molybdenum nitride and molybdenum oxide films and the understanding of the mechanism behind that growth. There appears to be an urgent need in the industrial community for such films, given the versatility and the wide range of applications this compounds can provide. This work addresses the growth and characterization of these films, working closely with precursor providers to achieve this goal.