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SnO2 Nanostructure And BaZrxTi1-xO3 Phase Shifter

Posted on:2008-03-31Degree:DoctorType:Dissertation
Country:ChinaCandidate:Z YingFull Text:PDF
GTID:1118360242458302Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Nanostructures have been the absorbed intensive research for their uniquephysical and chemical properties; In this dissertation, one-dimensional SnO2nanostructures and two dimensional BaxSr1-xTiO3(BST),BaZrxTi1-xO3(BZT)nanoscale thin films were synthesized by thermal evaporation methods and pulselaser deposited, respectively. And several novel and important applications of thesenanostructures were investigated experimentally; Main innovative results are listedas below:1. SnO2 nanostructures were successfully synthesized by catalyst-aim thermalevaporation method, our result show the diameters and morphologies ofproduct have been controlled by catalyst. And SiO2 "jellyfish-like"nanostructures and ZnO nanobelts have been achieved by a novel thermalevaporation method, the growth result expand the VLS mechanism to abroader range.2. Branched semiconducting oxide nanowhiskers were synthesized via acontrolled two-step vapor-liquid-solid approach with the aid of nanoclusterscatalysts, the numbers and the morphologies of branched nanostructures wereachieved by controlling the catalysts. The field emission characteristics ofSnO2 nanostructures and branched nanostructures were studied. The turn-onfield was found to be as low as 1.18 Vμm-1 in Pt-aim catalysts product.3. Gas-sensor, Li-ion battery, supercapacitance were fabricated by SnO2nanowires, our results show: gas-sensor exhibited a sensitivity of 23 to 50ppm ethanol gas at 300℃, first capacity of Li-ion battery achieved to 2133mAh/g, capacity of supercapacitance achieved to 90-140F/g, Our resultsdemonstrated that SnO2 nanowhiskers have a promising application for gassensor and power device.4. The crystal structure and in-plane dielectric and ferroelectric properties ofBST thin films epitaxially grown on LaAlO3 (LAO) and MgAl2O4(MAO)(001) single crystal substrates by pulsed-laser deposition are compared. AndBZT thin film epitaxially grown on LSAT single-crystal substrates throughpulsed-laser deposition, a large dielectric tunability of 50% was found in thefilm. The phase shifter device were fabricated on BZT thin film, the 270°phase shift were achieved by 100V electric field on 6GHz.
Keywords/Search Tags:SnO2 nanostructures, BST, BZT, Phase phifter
PDF Full Text Request
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