Font Size: a A A

The Simulation Of Three-Dimensional Microwave & Millimeter-Wave Integrated Circuits

Posted on:2002-10-04Degree:DoctorType:Dissertation
Country:ChinaCandidate:Q WangFull Text:PDF
GTID:1118360122996234Subject:Radio Physics
Abstract/Summary:PDF Full Text Request
With the development of information technology, microwave and millimeter wave integrated circuits based on planar circuit technics have reached their limit. One choice to reduce the volume and improve the ratio of performance and price is three-dimensional microwave and millimeter wave integrated circuit technonogy. The application of three-dimensional microwave and millimeter wave integrated circuits spreads nearly all over the wireless applications, including mobile communications, satellite communications, wireless cable television, wireless local area network (LAN), vehicular radar and so on.Resently the studies about three-dimensional microwave and millimeter wave integrated circuits are hotspots of the microwave circuit studies,Attention is paid on the circuit designing and the circuit simulation of three-dimensional microwave and millimeter wave integrated circuits in this paper.Based on Method of Lines, a new simple method of abstracting static parameters of planar type multilayer transmission line structures with finite metallic thickness is presented. The rationality of this method is explained through quasi-static modes of microstrip lines. Calculation results indicate that this method is suitable for the structures with thin metallic thickness.A new type of transmission line, microstrip line with elliptic cross-section is studied by the Finite Element Method. The effect of metal cross-section shape and metal penetrating depth is studied.The problems of impedance and coupling disturbance in three-dimensional microwave and millimeter wave integrated circuits are studied from the point of view of characteristic impedance. A quasi-static analysis method and a calculation example are presented.A time-domain simulation program is edited for three dimensional microwave and millimeter wave integrated circuits. This program is applied to simulate the thin film microstrip lines with finite ground width.The results of numerical modeling indicate that the thin film microstrip lines with finite ground width have good broad band characteristics and the characteristic impedance, attenuation constant and effective dielectric constant have small change with the finite ground width changing.At last a circuit constructed by lumped inductor and lumped capacitor is simulated. The effect of three-dimensional layout is studied.
Keywords/Search Tags:three-dimensional, microwave and millimeter wave integrated circuits, method of lines, finite difference time-domain method
PDF Full Text Request
Related items