Development Of RF Power Amplifier For Internet Of Things Wireless Communication

The commercialization of 5G mobile communication has begun.Thanks to the highspeed transmission rate,millisecond-level transmission delay,and hundreds of billions of massive device networking capabilities,many application scenarios are being realized;and the life of the Internet of Everything is also being reached step by step.After 5G technology proposes full-band technology and develops in the direction of higher frequency band and larger bandwidth,Io T communication technology is part of the core technology of 5G communication technology.It begins to develop in the direction of expanding coverage and increase the carrying capacity of networking equipment.Cellular Io T Mobile communication technology has begun to receive a lot of attention and been developing rapidly.As the core of building a cellular communication network,the communication base station has ushered in a new climax of demands and challenges.The main challenges focus on transmitting highpower,high-linearity signals and improving efficiency.The RF power amplifier is the core device in the base station transmission chain,and its nonlinear distortion often determines the distortion degree of the final transmitted signal.The RF power amplifier has many nonlinear characteristics in the state of high output power.Therefore,how to improve the nonlinear distortion of RF power amplifiers has become a current research spot.This paper firstly introduces the research and development of linearization technology at home and abroad,analyzes the characterization of RF power amplifiers and the categories of traditional types of RF power amplifiers in detail.It then introduces four commonly used linearization techniques.The relevant working principles and characteristics of the process are analyzed.Its small and large signal equivalent circuits of Ga As HBT devices and its high-frequency equivalent circuits of passive devices are analyzed.The process parameters and component layouts used in the design are given.Finally,for cellular Io T mobile communication,a two-stage RF power amplifier in the N40 frequency band(2300 MHz-2400 MHz)is designed using Ga As HBT technology.The RF power amplifiers have high saturation output power and good linearity with sufficient power backoff.This design uses a bias circuit with adaptive and temperature compensation effects combined with a simple LC output matching circuit with harmonic suppression to improve linearity.In the design process,the Keysight ADS simulation tool is used to simulate the circuit principle,and Cadence Virtuoso completes the layout design drawing.An parallel electromagnetic simulation is carried out in layout EM model.It is continuously optimized to meet the design specifications before tape-out.The EVB board required for the test is designed and the test platform is built to debug and characterize the RF power amplifier.The final test results are: the saturated output power of the designed RF power amplifier was reached at 33 d Bm,the P1 d B of 31.6 d Bm,the gain of 29.5 d B.The power added efficiency was 12% when the output power was 24.5 d Bm rated output power.The ACPR test result was-45.1 d Bc.The measured performance is good and meets expectations.