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Design Of 24.2-29.5GHz Low Noise Amplifier Based On 65nm CMOS Process

Posted on:2022-06-13Degree:MasterType:Thesis
Country:ChinaCandidate:Z M YangFull Text:PDF
GTID:2518306740993269Subject:Integrated circuit design
Abstract/Summary:PDF Full Text Request
In order to meet the demand for higher and higher data transmission rates,the bandwidth of wireless communication systems is gradually increasing.At present,in order to ensure a wider working frequency band,the working frequency has begun to expand to the microwave and millimeter wave frequency bands,and 5G cellular networks are one of the most promising applications.As the first active module in a wireless receiver,the Low Noise Amplifier(LNA)has a very important influence on the sensitivity of the receiver link and the signal-to-noise ratio.Therefore,it is of great significance to study low-noise amplifiers used in 5G RF front-ends.In this thesis,a 24.2-29.5GHz low-noise amplifier is designed for 5G RF front-end based on the 65nm CMOS process.The low-noise amplifier adopts a two-stage amplifier cascade structure.The first stage adopts an active balun structure to convert single-ended signals to differential signals and perform noise cancellation.The second stage provides high gain by a cascode structure with cross-coupling capacitors.The low noise amplifier adopts two-stage gain complementary bandwidth expansion technology to increase the bandwidth,and adopts a cascode structure with parallel inductors between stages to reduce noise.A buffer is added after the two-stage amplifier for improving the amplitude and phase balance of the differential output signal.The EM simulation results demonstrate a broadband of 24.2-29.5GHz,a gain of 21.7-23.2 dB,a gain ripple of 1.5dB,a noise figure(NF)of 4.41 dB,an input matching(S11)of less than-13.2dB,and an output matching(S22)of less than-10.6dB.At 27 GHz,the input1dB compression point(IP1dB)is-23.8dBm,and the input third-order intercept point(IIP3)is-14.9dBm.The performance of the balun is achieved between 24.2GHz and29.5 GHz with gain and phase imbalance below 0.36 dB and 3.2 degrees.The total power consumption is 27.8m W with 1.2 V supply voltage,while the core area is only0.20 mm2.The low-noise amplifier designed in this thesis meets the design index and has taped out via the MPW plan.It can be used in 5G communication system after testing and verification.
Keywords/Search Tags:low noise amplifier, active balun, noise cancellation, broadband expansion technology, differential signal balance
PDF Full Text Request
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