Design Of Low-power Tunneling Field Effect Transistor Inverter

The development of integrated circuits has been advancing rapidly in accordance with Moore's Law.As the number of transistors continues to rise,the performance of the chip is constantly improving.At present,the size of integrated circuits has entered the nanometer level,and the problems such as short-channel effects and high-frequency parasitics in traditional MOSFET are becoming more and more serious.Because of the sub-threshold swing of MOSFET is restricted by Boltzmann distribution,it is difficult to break through the60 m V/dec limit at room temperature,and the working voltage V_DD cannot be reduced in proportion to the device size.The power consumption problem of the traditional MOSFET has become a serious problem.In order to overcome the physical limit of the MOSFET,tunneling field effect transistor has become the object of research scholars competing for research.TFET is based on a working mechanism with band tunneling,which can obtain a large current on-off ratio under a small power supply voltage V_DD,which is suitable for the design of low-power circuits.At present,researchers have launched a lot of basic research on TFET,however,there is no more accurate analytical model,and the research is still immature.The research content of this thesis are as follows:Firstly,based on the working principle of TFET,this thesis put forward a equation based on the TFET.The electric potential model of the double-gate TFET was deduced by Poisson equation,and the minimum tunneling distance was further solved to obtain the tunneling current.The model was written into the circuit design through SPICE simulation software.The simulation shows that the established model can accurately describe the electrical characteristics of the device,does not involve the numerical iteration process,has low requirements on computer hardware,and has high simulation efficiency,which promotes the in-depth study of TFET circuits.Secondly,the problem of matching the electrical characteristics of the complementary TFET inverter based on the potential model was solved.By improving NTFET and PTFET source doping,drain doping,work function,gate oxide thickness and other parameters,the inverter can have a more symmetrical noise tolerance and logic threshold.Finally,a low-power design for the TFET inverter was carried out.This thesis designed from the static power consumption and dynamic power consumption of the inverter respectively.Using the DTCO concept,the influence of the physical parameters of the TFET on the electrical characteristics of the TFET was explored,and the factors affecting the power consumption of the CTFET inverter were summarized,and the optimization of the power consumption of the inverter was realized.