Morphology Control And Characterization Of Ultra-wide Bandgap Semiconductor Nanometer Based On Gallium Oxide

Due to their quantum size effects,nanomaterials possess unique electronic,optical and magnetic properties superior to traditional materials and serve as important building blocks for optoelectronic devices and high performance electronic,it has broad application potential.They have possible application such as nanowire-based field effect transistors(NW-FETs),gas sensors,solar blind photo detectors,which improve device performance by using nanomaterials.The synthesis and characterization of nanomaterials has become a very important research topic.Many research teams have successfully prepared nanomaterials with different morphologies using different techniques.Ga₂O₃ is a wide band gap semiconductor oxide,band gap between 4.9e V and 5.2e V with good thermal and chemical stability,it has a good application prospects in photoelectric devices with high power,high voltage and high current density.At the same time,the research of gallium oxide alloy compounds is also a hot spot.By adjusting the concentration of other elements in the alloy compounds,the properties of nano materials can be improved.(Ga In)₂O₃ is an alloy compound based on gallium oxide,and it has the characteristic of transparent oxide.It is a new kind of multicomponent system material which has attracted much attention in recent years.The band gap of(Ga In)₂O₃ could be tuned from 3.7e V to4.9e V by controlling the composition of the alloy,it has good conductivity at low carrier concentration and relatively low absorption rate in visible light range.In this paper,a series of?-Ga₂O₃ nanomaterials have been successfully prepared on the substrate by chemical vapor deposition method,using the Ga and Ar/O₂ gas as the reaction source without catalyst.By adjusting the preparation process,the control experiment has been carried out.At the same time,the mixture of Ga,In and Ar/O₂ gas were used as the reaction source to prepare the(Ga In)₂O₃ alloy nanostructure on the substrate.The morphology and crystal structure are characterized by Energy dispersive spectrometer(EDS),scanning electron microscopy(SEM),X-ray diffraction(XRD)analytic technologies and photoluminescence(PL)spectra.The sample of?-Ga₂O₃ nanometer material was prepared by changing the technological parameters.By analyzing and comparing the test results of samples with different growth temperature,time and oxygen content of carrier gas,we optimize the experimental parameters and analyze that?-Ga₂O₃ basically followed the vapor-solid growth mechanism.It is found that?-Ga₂O₃ nano material has a wide emission spectrum band with a peak position of 392nm.In addition,relevant tests are carried out on the structure samples of(Ga In)₂O₃ alloy,and the results show that with the increase of temperature,the sample results show the phenomenon of transformation from nanometer column to nanometer ball and from monoclinic crystal system to cubic crystal system.The photoluminescence(PL)spectra shows wide emission bands in the range from 400nm to 450nm,confirming the sample has both cubic and monoclinic crystal structures.