| Silicon epitaxy plays an important role in semiconductor devices,and the quality of the epitaxial layer has an important impact on the final electrical parameters of the product.This article focuses on the most commonly used silicon epitaxial furnaces in the industry and their process principles.The process requirements and quality characterization methods are explained,and The focus is on how to improve the problem of slip line defects based on LPE2061 epitaxial furnace processing switching transistor products.The slip line is generated during the epitaxial growth process.The mechanism of the slip line is the mechanical damage generated during the substrate preparation process and the thermal stress generated during the growth of the high temperature epitaxial layer.The total stress under the combined action of the two is greater than that of the epitaxial layer.The critical stress value that causes crystal slip under temperature will produce a large number of slip dislocations,commonly known as slip lines[1].Take the epitaxial furnace processing switch transistor product as an example.When the upper layer slip line defect is serious,it will cause serious leakage and cause the yield of the processed product to drop significantly.In this paper,a switching transistor that is sensitive to epitaxial slip defects is used as the research carrier,and six different experiments are conducted to verify the methods of improving the slip line,including:different heating rates,temperature field distribution,deposition step temperature,growth thickness,substrate back Sealing and chamfering and airflow model.Improve the uniformity of temperature distribution through the research of the matching between the spare parts of the epitaxial equipment,optimize the processing procedure,reduce the temperature and improve the substrate chamfer,effectively reduce the slip line defects,which is of great significance to improve the yield of the product. |
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