Research On GaN Microwave Wideband Multifunctional Chip

Microwave transceiver front ends are an important part of wireless systems and widely used in radar,electronic warfare,and communications fields.MFCs have become a core component for the convergence of radar,electronic warfare,and communications by solving the problems of traditional transceiver components such as large size,complex connection lines,poor matching and low integration.Due to the superior performance of GaN HEMTs,GaN process-based monolithic microwave integrated circuits(MMICs)transceiver multi-function chips(MFCs)have become the focus of research in the field of solid-state microwave devices today.In this paper,a0.25?m Si C-based GaN process-based transceiver multifunction chip is considered,and the main work and innovative points of the chip are as follows:1.Focused on deriving the relationship between the insertion loss(IL)and isolation(ISO)of the switch and the intrinsic parameters of the transistor,and calculated the on-state resistance R_on and off-state capacitance C_off based on the equivalent switching model of the transistor,which greatly improves the efficiency of switch design.Two single-blade double-throw switches operating at 2-18GHz and2-6GHz were designed.The simulation results of the 2?18GHz switch show that its IL is less than 1.5d B,ISO is greater than 25d B,and power capacity(P_C)is greater than 5W.In the 2-6GHz switch test,the IL is less than 1.8d B,ISO is less than 40d B,and P_C is more than 100W in the operating band,and the chip area is 2.4×2.2mm²,which is the great level in the published reports.2.To address the problems of inductive effects of bonding lines and resonance of on-chip decoupling capacitors,an ultra-wideband bias circuit structure was devised in which a tuning inductor is connected in series after the on-chip decoupling capacitor,and a 2-6GHz power amplifier was designed based on this bias structure.In this paper,we have also designed a 2-18GHz power amplifier using a non-uniform distributed topology with M export structure and capacitive coupling technique for the drain and gate of the transistor,respectively.The simulation results show that the output power(Pout)of the amplifier is more than 2W,the power added efficiency(PAE)is more than22%,and the gain(Gain)is more than 10d B.Continuous wave test results for 2-6GHz band power amplifier achieved Pout of more than 10W,Gain of more than 15d B,and PAE of 27-50%in the operating band with a chip area of 4.4×3.3mm².3.A low-noise amplifier with a chip area of 2.5×1.5mm² and operating in the band of 2-6GHz was designed using a two-stage cascaded reactance-matching type circuit topology and the noise figure(NF)and gain(Gain)were found to be better than 2d B and 15d B,respectively.4.Two transceiver multifunctional chips were designed,operating from 2-18GHz,with integrated switches and power amplifiers,and simulation results showed that the chips achieved 2W Pout and>14%PAE in the transmit branch and<1.8d B IL in the receive branch.From 1.5-5.5GHz,the chip achieves Pout of more than 39d Bm and PAE of 24%to 37%in the transmit branch,NF of less than 3d B and Gain of more than 15d B in the receive branch,with a chip area of 6.7×3.3mm².