Preparation And Properties Of Si-doped ZnSnO Thin Films

In this paper,the preparation and properties of Si Zn Sn O(SZTO)films doped with different Si contents,and the preparation and properties of SZTO films sputtered under different argon-oxygen ratios were studied.An oxide semiconductor is an oxide having a semiconductor characteristic.Transparent conductive oxides are widely used as transparent electrodes on photovoltaic devices,flat panels and touch screen displays.The most popular concern is "Transparent Amorphous Oxide Semiconductors(TAOS)".Amorphous oxide semiconductors(AOS)have attracted wide attention from researchers due to their simple preparation conditions(which can be prepared at low temperatures)and high electron mobility.Owing to the superior performance of the oxide semiconductor TFT,it is more suitable as a base material for driving a TFT of a new generation display such as an ultra high definition liquid crystal panel,an electronic paper,or an organic EL panel.It also supplies raw materials for electronic components such as "flexible" and "transparent".With the further development of the research,the researchers began to dope the AOS material system to improve the working characteristics and stability of the device.The doping of Si element can effectively inhibit the formation of oxygen vacancies in the semiconductor material and make the device operate stably.Therefore,it has become more and more interesting to study Si-doped Zn Sn O films.In this paper,the effects of different Si content doping on the properties of SZTO films were investigated,and the effects of different Si content on the performance of SZTO films were investigated.We used RF magnetron sputtering to prepare SZTO film samples using glass and quartz as substrates.The crystal structure of the film samples was analyzed by X-ray diffraction.The surface morphology of the samples was observed by AFM.The light transmittance of the films was characterized by UV spectrophotometer and the band gap was calculated.The photoluminescence spectra of the films were characterized by fluorescence spectrometer.The results show that Si doping has no obvious promotion or inhibition on the formation of amorphous film,but Si doping can reduce the formation of defects and can significantly change the optical band gap.AFM studies have shown that Si doping reduces the flatness of the film sample.The intensity of the Si doping concentration increases with different degrees of intensity and broadens the broadening of the PL spectrum,indicating that more deep-level defects are introduced in the Si-doped Zn Sn O film samples.The surface morphology of the sample was observed by AFM.When the oxygen flow rate was 0 sccm,the surface of the sample was the most flat and the film growth was the most uniform.The transmission spectrum test shows that the oxygen flow has a significant effect on the optical properties of the film sample.When the oxygen flow rate is 10 sccm,the optical band gap of the film can be significantly increased.The PL spectrum test shows that with the increase of oxygen flow rate,the strongest luminescence peak of the film will first weaken and then strengthen.When the oxygen flow rate is 10 sccm,the oxygen vacancy defect in the film sample can be better filled.The peak value of the luminescence is lowered.