Lateral-structured Micro-LED Array Fabricated By Ion Implantation

The biggest difference between Micro-LED and traditional light-emitting diodes lies in the device size,and the difference in device size causes its performance differences in current density,optical output power density and current expansion capability.It is used in micro-display,optical communication and aviation.There are huge application potentials in aerospace and other fields.Although the size reduction of Micro-LED brings various performance advantages,the size reduction also brings problems such as device edge effect and size effect of light efficiency,and the yield rate of massive transfer needs to be further improved.At present,the preparation methods of Micro-LED arrays mainly include:etching,ion implantation,secondary epitaxy,selective oxidation and other process schemes.The above-mentioned processes have their own advantages and disadvantages.Among them,ion implantation can not only achieve electrical isolation between adjacent Micro-LED pixel units efficiently and simply,but also the flattened surface structure left after ion implantation has the potential to increase the total light output power of the Micro-LED array.Therefore,in this paper,the ion implantation isolation process is used to study the lateral structure of Micro-LED devices and their arrays.The main research contents are as follows:(1)Study the effect of ion implantation conditions on the photoelectric performance of Micro-LED devices and their arrays,and found that different implantation energies and implant doses have varying degrees of influence on the electrical performance and luminous effect;(2)Study the effect of pixel size on the electrical performance of Micro-LED devices and their arrays,and found that the smaller the pixel size,the greater the relative leakage;(3)Research the annealing conditions of specific ITO and p-GaN ohmic contact,and find that the pulse annealing method can achieve better ohmic contact effect;(4)Study the impact of dry etching and ion implantation isolation on the leakage of the Micro-LED array,and the ion implantation isolation of the Micro-LED array has a slightly lower leakage level;...