Research On Preparation,characteristics And Mechanism Of TaO_x?based Memristor Enhanced By Quantum Dots

With the rapid popularization of 5G technology,human society is entering the era of big data comprehensively.However,traditional storage technologies,represented by flash memory are facing their physical limits.Under this background,it has become an irresistible trend to develop the next generation of storage technology with better performance.Due to the advantages of non-volatile,low power consumption,high integration,and compatibility with CMOS technology,memristors have been widely used in many fields such as non-volatile storage,logic operations and neuromorphic computing.However,because of the random growth of conductive filament during the resistance switching,the reliability of the device needs to be further improved,which hinders the commercial application of memristors.Therefore,it is of great significance to strengthen the regulation of the memristor guide path and enhance the consistency of the device.In this work,the performance enhancement of TaO_x based memristors based on oxygen vacancy conductive filament as the conductive mechanism was studyed.With the enhancement of Pb S quantum dots to regulate the growth of conductive filament,a memristive Pt/Pb S QDs/TaO_x/Ta structure was prepared The device conducts research on the device's operating voltage and resistance-state stability,multi-value characteristics,self-limiting characteristics,and fatigue characteristics.Additionally,an explanation of the conduction model was given based on the test results.The main research contents are as follows:(1)Study of the structure design and process realization of TaO_x based memristors:to prepare the TaO_x thin films,the argon-oxygen gas mixture in reactive sputtering was adjusted.The fitting of the DC characteristic curve is used to study the device'conduction mechanism in low and high resistance state.Morever,the device performance in conductance modulation characteristics,endurances and retention of the device were studied.(2)Study of the spin-coating process of Pb S quantum dots transferred to tantalum oxide thin films:We prepare Pt/Pb S QDs/TaO_x/Ta structure memristors to study the influence in stability of the device in resistance and operating voltage.We also study on the difference between different thickness of QDs devices.Further more,it was found that the Pb S quantum dot has a strengthening effect on the performance of the device in terms of multi-value characteristics,self-limiting current,and pulse cycle characteristics.(3)Propose an explanation model for the conduction mechanism of Pt/Pb S QDs/TaOx/Ta devicese,which is induced by QDs.Morever,the performance of the device when the Pb S quantum dot layer is located at the interface of different materials is compared and analyzed,and the effect of the Pb S quantum dot on the Pt-TaOx interface is verified.