Research On Analog And RF Characteristics Of Novel Finfet Devices

Due to the feature size of the CMOS device is close to the physical limits,and short channel effect(SCE)hinder the further development of semiconductor devices.FinFET device had been proved that it can effectively suppress the short channel effect.However,parasitic effect of FinFET device was extremely obvious,and the current drive capability was reduced.Due to this,new materials and construction based on FinFET device had been a new orientation in semiconductor industry.In this thesis,associated with the study of the structural and physical characteristics of the classic FinFET device,I had a deep research on analog and RF characteristics of multi-fin FinFET device.Here is details.(1)It gave comprehensive details about the structural and electrical characteristic of classic FinFET device,and the relevance of its structural parameters and short channel effect.Studies had shown that,FinFET devices had outstanding performance in terms of suppressing the short channel effect,but its large gate impedance would reduce current drive capability.The multi-fin FinFET can decrease gate impedance so that it would resolve the low gain problem of classic FinFET.(2)This thesis proposed comprehensive parasitic resistance and capacitance estimation model for multi-fin FinFET based on the structure analysis,because classic calculation method cannot be well used.Since the number of fins(Nfin)of multi-fin FinFET device was variable,I summed up estimation model of parasitic resistance by recursive method.And parasitic capacitance were calculated by separating in two parts which are overlap capacitance and fringe capacitance.Finally,the simulation results showed that as Nfin and fin spacing(Sfin)increase,fringing parasitic capacitance exhibited an almost linear increase in the trend.In addition,in order to reduce parasitic capacitance,the height of Fin needed to be twice more than Width,and Sfin would be smaller as plssible.(3)Due to the analysis of the multi-fin FinFET and tri-gate FinFET drain current and fT/fMAX,simulation proved that the above-threshold current of multi-fin FinFET devices was 20 percent higher than tri-gate FinFET devices.Also,while gate length below 50 nm,cut-off frequency of multi-fin FinFET was 30-60 percent higher than tri-gate FinFET,as well as average 45 percent in maximum oscillation frequency.Finally,we gave great details for the power control technology of the multi-fin FinFET devices and discussed its application prospect in miniaturization,low-power devices.