Control of polarization of vertical-cavity surface-emitting lasers

To date, most vertical-cavity surface-emitting lasers (VCSELs) have been fabricated from structures grown on GaAs (InP) substrates oriented in the (001) crystallographic axis. For the most part, these devices have exhibited linear, but random polarization states with no definite relationship to the in-plane crystallographic axes. The control of the polarization states of these devices is important for polarization-sensitive applications. Such applications include magneto-optic disk recording and coherent detection in advanced communication systems.; In this thesis, a novel approach for controlling the polarization eigen-states of VCSELs is investigated. The approach utilizes anisotropic optical properties found in quantum wells (QW) oriented in directions other than the (001) to stabilize their polarization states. Specifically, the (110) direction is chosen for this work.; An analysis of the in-plane optical matrix element connected with the gain coefficient of (In,Ga)As/GaAs QW structures grown on (110) GaAs substrates is conducted. It is found that the in-plane gain distribution is elliptically anisotropic--with a maximum directed along the (110) - (110) crystallographic axis.; The design and growth of (In,Ga)As/GaAs QW VCSEL structures is studied in this work. The transition wavelengths of the (001) - and (110) -oriented (In,Ga)As/GaAs QW structures are calculated using a finite QW model. Distributed Bragg reflector mirrors consisting of GaAs/AlAs quarter wave layers are modeled using a characteristic matrix method. Threshold gain, internal and differential quantum efficiencies are analyzed. The growth of III-V compounds on (110) GaAs substrates by molecular beam epitaxy is investigated. High quality materials are successfully grown on the misoriented (110) GaAs substrates tilted by 6{dollar}spcirc{dollar} toward the (111)B surface. (In,Ga)As/GaAs QW VCSEL structures are grown on (001) and (110) GaAs substrates.; (In,Ga)As/GaAs QW VCSELs are fabricated from structures grown on the (001) and (110) surfaces. Experimental characterization shows that the devices fabricated from the (110) surface exhibit stable, well-defined polarization states at room temperature; this is in contrast to the random polarization characteristics observed from the VCSELs fabricated from the (001) surface. This stability is believed to be a consequence of the predicted anisotropic gain distribution on the (110) surface. Of the two orthogonal eigen-polarizations observed, the one with the higher optical intensity is found to be aligned along the (110) - (110) crystallographic axis; this is in agreement with theoretical predictions.