| Red electroluminescence from AlGaN/GaN HEMTs from two manufacturers with completely different sources of GaN material was measured. Results for gate voltage, drain voltage, temperature and time dependency are general, and not linked to a specific growth technique. The optical spectrum of the electroluminescence showed a peak energy of 1.55eV. MEDICI device simulations along with measured data were used to build a model for photon emission that involves mid-bandgap traps possibly located in the carbon doped GaN sublayer and impact ionization for carrier supply. |
