| The III-nitrides exhibit large electronic polarization fields, which can be manipulated as an additional parameter in device design. The vast majority of the devices created have been on the (0001) Ga-face crystal plane due to the rough surface morphology and growth difficulty of (0001¯) N-face GaN grown by metalorganic chemical vapor deposition (MOCVD). However, there are several situations where the reverse polarization fields provided by growth on the N-face crystal plane are advantageous. This thesis describes a method for growth of high quality N-face GaN by MOCVD. In particular, the influence of growth conditions as well as polarity on the impurity incorporation is explored. In addition, the growth and characterization of N-face p-type GaN is explored along with the demonstration of N-face GaN based devices. |
