Micro- and nano-scale optical devices for high density photonic integrated circuits at near-infrared wavelengths

In this research work, we explore fundamental silicon-based active and passive photonic devices that can be integrated together to form functional photonic integrated circuits. The devices which include power splitters, switches and lenses are studied starting from their physics, their design and fabrication techniques and finally from an experimental standpoint. The experimental results reveal high performance devices that are compatible with standard CMOS fabrication processes and can be easily integrated with other devices for near infrared telecom applications.;In Chapter 2, a novel method for optical switching using nanomechanical proximity perturbation technique is described and demonstrated. The method which is experimentally demonstrated employs relatively low powers, small chip footprint and is compatible with standard CMOS fabrication processes. Further, in Chapter 3, this method is applied to develop a hitless bypass switch aimed at solving an important issue in current wavelength division multiplexing systems namely hitless switching of reconfigurable optical add drop multiplexers. Experimental results are presented to demonstrate the application of the nanomechanical proximity perturbation technique to practical situations.;In Chapter 4, a fundamental photonic component namely the power splitter is described. Power splitters are important components for any photonic integrated circuits because they help split the power from a single light source to multiple devices on the same chip so that different operations can be performed simultaneously. The power splitters demonstrated in this chapter are based on multimode interference principles resulting in highly compact low loss and highly uniform power splitting to split the power of the light from a single channel to two and four channels. These devices can further be scaled to achieve higher order splitting such as 1x16 and 1x32 power splits.;Finally in Chapter 5 we overcome challenges in device fabrication and measurement techniques to demonstrate for the first time a "superlens" for the technologically important near infrared wavelength ranges with the opportunity to scale down further to visible wavelengths. The observed resolution is 0.47lambda, clearly smaller than the diffraction limit of 0.61lambda and is supported by detailed theoretical analyses and comprehensive numerical simulations. Importantly, we clearly show for the first time this subdiffraction limit imaging is due to the resonant excitation of surface slab modes, permitting amplification of evanescent waves. The demonstrated "superlens" has the largest figure of merit ever reported till date both theoretically and experimentally.;The techniques and devices described in this thesis can be further applied to develop new devices with different functionalities. In Chapter 6 we describe two examples using these ideas. First, we experimentally demonstrate the use of the nanomechanical proximity perturbation technique to develop a phase retarder for on-chip all state polarization control. Next, we use the negative refraction photonic crystals described in Chapter 5 to achieve a special kind of bandgap called the zero-n¯ bandgap having unique properties.