Preparation, Modeling And Circuit Application Research Of ZnO Based Memristor

After entering the information age,integrated circuits have become the basic industry of information technology and information society.However,as the process size of CMOS logic circuits and memory devices continues to shrink,physical limits have been approached,and "Moore's Law" in the field of integrated circuits will also be difficult to continue.The traditional von Neumann computer architecture with separate information storage and information processing has also ushered in the development bottleneck,and academia and industry urgently need to find new information devices and information system architectures.In order to deal with these synaptic problems,many researchers began to focus on the research in the field of memristors.So far,the existing research has only stayed at the stage of making memorandum devices with excellent performance through continuous improvement and improvement of process methods.For the application of circuits,there are few electrical models for specific memristor materials in the published literature,which affects the efficiency of circuit design and development cycle based on memristor to a certain extent.The research content of this article will focus on exploring the performance and modeling of ZnObased memristors,and applying the constructed mathematical model to digital logic circuits.main tasks as follows.Using ITO conductive glass as the substrate,a ZnO thin film was prepared by a magnetron sputtering process,and an Al thin film was deposited as an electrode by electron beam evaporation technology to prepare an Al / ZnO / ITO structure memristor.Test the performance of I-V characteristic curve,switching ratio,Set / Reset voltage of ZnO-based memristor under different oxygen flow rate,electrode size and ZnO film thickness process conditions.The memristor prepared at an oxygen flow rate of 20 sccm has obvious voltage threshold characteristics and a high switching ratio.The smaller the electrode size,the greater the switching ratio,but the Set voltage will increase.The set voltage is positively correlated with the film thickness.Reducing the film thickness decreases the memristor switching ratio.Different process conditions have improved and lowered the performance indicators of the memristor.For specific application circuits,various performance tradeoffs need to be selected.A theoretical model of boundary migration and a bipolar voltage threshold switch model are established.The boundary migration theory model is suitable for ZnO-based memristors prepared at low oxygen flow rates.Memristors prepared at an oxygen flow rate of 20 sccm have obvious voltage threshold characteristics,and the bipolar voltage threshold switch model fits better.Modify the memristive differential equation to adapt the model to the asymmetrical characteristics of ZnO based memristor Set / Reset voltage,establish a fitting function,and compare the simulation model to the ZnO-based memristor I-V characteristic fitting effect.Apply voltage threshold switch model to simulate MRL logic AND gate and NOT gate,focus on analysis of MRL logic power consumption,noise tolerance and reproducibility,fan-in fan-out performance,based on the principle of completeness of Boolean logic,propose a hybrid of MRL and CMOS The logic circuit solves the problem of completeness of Boolean logic and improves the reproducibility of the circuit.