Research And Design Of THZ Harmonic Oscillator Based On 40nm CMOS Technology

Terahertz(300 GHz?3 THz)circuit has very broad application prospects in nondestructive detection,deep space remote sensing and high-speed communication.Terahertz signal source plays a key role in terahertz circuit,but there are many difficulties in the design of terahertz frequency band circuit.CMOS technology has the advantages of high integration and low manufacturing cost,but terahertz signal source based on CMOS technology has the problem of low output power,so it is difficult to apply to the actual communication system.To solve this problem,four terahertz oscillator unit circuits are coupled to obtain a larger output power.In this dissertation,the circuit structure of four-core triple-push oscillator is used to generate terahertz signal.The circuit contains four terahertz unit circuits.The unit circuit adopts triple-push structure.The ground coplanar waveguide(GCPW)is used as inductor and resonates with the capacitance inside the transistor.The frequency of the fundamental wave signal is about 100 GHz,and the third harmonic generated by the nonlinearity of the device is used to get the required terahertz output signal.In order to get more accurate simulation results,the parasitic capacitance of the stacked metal on the transistor and the connector between GCPW and the transistor are also simulated.In order to obtain higher output power,four oscillation unit circuits are interconnected to synchronize the oscillation signal,and the third harmonic of the unit circuit is extracted to combine the power,and output to the load,so as to obtain the terahertz signal with high output power.In this dissertation,two terahertz four-core triple-push oscillator chips are designed by using 40nm CMOS technology.The difference is only whether the circuits are interconnected or not.This dissertation completes the circuit design,layout design and road field hybrid simulation,and carries out on-chip and on-chip testing.The layout area of the two chips is 0.275 mm~2.At 0.9 V DC voltage,the interconnected THz signal source chip has an oscillation frequency of 323.83 GHz,an output power of-15.98 dBm,a phase noise of-71.50 dBc/Hz at 1MHz and a power consumption of 109.8mW.The unconnected THz signal source chip has an oscillation frequency of 329.24 GHz,an output power of-20.78 dBm and a phase noise of-71.00 dBc/Hz at 1MHz.The consumption is 114.3 mW.