Thermal Field Design And Simulation Analysis Of SiC Single Crystal Growth Equipment

Silicon carbide(SiC)is one of the representatives of the third generation of semiconductor materials.Silicon-based oxide semiconductor field effect transistors(Si MOSFETs)based on the second-generation semiconductor material silicon(Si)can only be used in applications below 1000V,and the actual applications are mostly concentrated between 600 and 900V.When working under high voltage,the size of the chip will increase exponentially,and the loss and parasitic capacitance of the switching process will also increase.In contrast,the advantages of silicon carbide devices stem from the excellent physical properties of the material itself,which can reduce energy loss.In addition to stable operation under high pressure,it is more resistant to high temperatures,and it is easy to achieve miniaturizationAt present,the limitations of silicon carbide devices stem from the bottleneck in crystal growth technology.Stable,batch preparation is difficult to achieve,which is the root cause of the high cost of silicon carbide wafers.The preparation of wafers is an important industry upstream in the manufacture of semiconductor materials.When evaluating the ability of a research institution to grow crystals,the evaluation criteria include two aspects.One is to obtain the size of the ingot,such as the diameter and the diameter of the ingot obtained by the Czochralski method.The length of the stretch,the diameter and thickness of the ingot obtained by the PVT method,etc.;The second is the degree of defects of the obtained wafer,such as microtube density and large thermal stress.This article focuses on the structure design and thermal field analysis of the crystal growth furnace.In Chapter 2,the research object of this article is the silicon carbide crystal growth technology.Based on the analysis of three commonly used silicon carbide growth technologies,the physical meteorological transmission method is designed.As the main research content of this article,thermal field analysis and the importance of the application of the crystal structure of silicon carbide materials and the influence of the crystal growth process from the perspective of materials science are discussed;Chapter 3 is based on the principle of electromagnetic heating,combined with heat transfer theory,Calculate and determine the structural parameters of each component of the thermal field of the crystal growth furnace,complete the structural design of the crystal growth furnace,and display the three-dimensional model diagram of the important structure of the furnace body;Chapter 4 is modeled according to the structural parameters of the thermal field components in Chapter 3 The crystal growth simulation software Virtual Reactor was used to obtain the temperature distribution of the thermal field area of the crystal growth furnace,and the simulation verification of the crystal growth furnace design was conducted to prove the validity and rationality of the design.The parameters were optimized and designed for the crystal growth furnace Provide simulation guidance;Chapter 5 through the silicon carbide crystal growth experiment carried out,the experimental exploration of the process of growing crystals,and obtained good resultsIn summary,the research work of this paper is mainly devoted to exploring a comprehensive SiC sublimation growth model.The author adopts computer simulation combined with experimental research ideas to illustrate the basic situation of the computer simulation software used.The comparison is obtained through multiple simulations.As a result,by changing the influence trend of the important structural parameters of the thermal field of the crystal growth furnace on the growth rate of silicon carbide crystals,the thermal field structure and parameter design of the crystal growth equipment were optimized to provide a reference for solving the difficulties encountered in the experiment.