Study On Design Method Of GaN Power Amplifier And Its Harmonic Spur Characteristics

It is well known that gallium nitride(GaN),as a new generation of semiconductor material,has the advantages of wide band gap,high electron mobility and high electron saturation rate which has been widely used for the design of various power amplifiers.In this thesis,two types of GaN power amplifiers were designed and implemented.Furthermore,their power and the spurious performance at different temperatures were measured and studied.The temperature-dependent performance of GaN PA was examined according to the model of AlGaN/GaN HEMT.The main work and innovations are summarized as follows:(1)Based on the commercial AlGaN/GaN HEMT,two Class-AB power amplifiers were designed and realized.Their output power was higher than 100W(50d Bm)and the additional efficiency was more than 50%.(2)The performance and harmonic spur performance parameters of the PA sample were measured over the temperature range from 233 to 393K(-40?120?).The measurement covered their input-output characteristics,input-power additional efficiency(PAE),output-ACPR and output harmonic characteristics etc.,which were very important for their application in radar and wireless communication.(3)Further,by analyzing the harmonic component test data of four GaN power amplifiers,the temperature-harmonic relationship of the device was analyzed.The modeling ability of the EEHEMT model for AlGaN/GaN HEMT in wide temperature range was verified,and the temperaturedependent harmonic spurs characteristics were improved.The results have important reference value for the integrated design of GaN power amplifier.