Study Of The Electrical Properties Of GaAs/AlGaAs Materials Via Element Doping

Al Ga As is a typical representative of the ?-? compound semiconductor materials due to adjustable Al component,high carrier mobility and small lattice mismatch with Ga As.The Al Ga As is considered to be one of the most important basic materials for optoelectronic and electronic devices,which has been widely studied and applied in the fabrication of semiconductor laser,solar cell and detector.Metal Organic Chemical Vapor Deposition?MOCVD?is as an emerging technology,which utilizes metal organic compounds to deposit ultra-thin,single crystal layers on the semiconductor wafer.The thin layers and heterogeneous multilayer structures with uniform thickness and impurity distribution are prepared via MOCVD technology,so that the MOCVD technology has been widely used in the growth of semiconductor thin layers,lowdimensional structures,and optoelectronic devices.However,there is a strong bond energy Al-C bond in the Al Ga As material when the Al Ga As material is prepared by MOCVD technology,which is result in the organic sources of raw materials.It ultimately leads to the high background doping concentration of the material,the difficult achievement of N-type Al_xGa_1-xAs,and the poor performance of semiconductor devices.In this paper,MOCVD technology is used to epitaxial Al Ga As materials with different Al components on semi-insulated Ga As substrate.The preparation method of N-type Alx Ga1-xAs epitaxial material with different Al composition was explored.The influence of doping amount on the electrical properties of Al_xGa_1-xAs materials with different compositions was analyzed,and the carrier concentration distribution of Al_xGa_1-xAs materials under different doping amounts was learned.At the same time,the mechanism of the unintentionally doped element C in the Al_xGa_1-xAs material was studied,and the influence of growth temperature on the concentration of the unintentionally doped C in the Al_xGa_1-xAs material was explored.The change of the Al-C bond content in Al_xGa_1-xAs materials to the conductivity type of Al_xGa_1-xAs materials and its mechanism were revealed.Finally,the doping characteristics of P-type Al_xGa_1-xAs was studied,and the growth parameters of high-quality Al_xGa_1-xAs thin film materials were explored,which provided technical support for the preparation and application of Al_xGa_1-xAs materials in semiconductor devices such as semiconductor lasers and solar cells,and provides technical reserves for the development of photoelectric field.