Research On Diamond-based GaN Microwave Power Amplifier

Compared with gallium nitride(GaN),ultra-wide bandgap semiconductor-diamond has a higher bandgap width,higher thermal conductivity and equivalent carrier mobility,and has a high power microwave millimeter wave power device field.Important application potential.With the development of GaN-based microwave power devices towards smaller sizes,greater output power,and higher frequencies,the problem of "heat" is becoming more and more prominent,and it has gradually become the most important problem restricting the improvement of such devices to higher performance.One.The use of high thermal conductivity diamond as the substrate for high-frequency,high-power GaN-based devices can reduce the influence of the self-heating effect of GaN high-power devices on power and efficiency,and has become a hot research topic in recent years.In this paper,the diamond-based gallium nitride microwave power amplifier is firstly modeled for diamond-based gallium nitride high electron mobility transistors(GaN-ondiamond HEMTs)quasi-physical zone division(QPZD),which is traditionally used in AlGaN/GaN Based on the QPZD model of the High Electron Mobility Transistor(HEMT),expandable variables and temperature-related parameters are added.Then through the measurement and verification of 2x125 ?m,4x125 ?m and 10x50 ?m GaN-on-diamond HEMTs devices,the results show that the proposed compact large signal scalable high and low temperature model can accurately predict DC IV,scattering parameters(S parameters)and Large signal performance.Finally,based on the established QPZD large-signal model,a diamond-based gallium nitride microwave matching power amplifier design was carried out.The simulation results showed that the power output of the amplifier was basically 43 dBm and the PAE was greater than 36% in the 9.5GHz~10.5GHz frequency band.