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Design Of 220GHz Voltage Controlled Oscillator And Injection Locking Divider Based On Silicon Based Process

Posted on:2021-05-09Degree:MasterType:Thesis
Country:ChinaCandidate:Y C CaiFull Text:PDF
GTID:2428330605451328Subject:Electronic Science and Technology
Abstract/Summary:PDF Full Text Request
With the pace of the times,the field of mobile communication has been increasingly innovated and developed year by year,and more and more wireless communication technologies and artificial intelligence products have been integrated into our lives.At present,5G mobile communication technology is gradually popularizing,and the working frequency band of high-frequency signals is very sufficient,and the multiplexing rate of the low frequency band is gradually saturated,resulting in the channel working space becoming increasingly crowded.Studying millimeter-wave signal transmission can greatly alleviate the burden of low-band channel operation.At the same time,the advantage of millimeter wave makes signal transmission greatly improve in stability,confidentiality and high efficiency,so millimeter-wave wireless communication research in technology is indispensable in today's communications field.This paper designs a millimeter-wave voltage-controlled oscillator and an injection-locked frequency divider based on the SiGe BiCMOS process.The thesis analyzes and introduces the start-up types,indicators,and characteristics of passive components of voltage-controlled oscillators.Then design the millimeter-wave voltagecontrolled oscillator and injection-locked frequency divider with wide lock range.The main contents are as follows:1.The structure of the millimeter-wave voltage-controlled oscillator is Colpitts.The HBT tube with shorted base emitter is used as the varactor.The frequency tuning range of the voltage-controlled oscillator finally realized is 213.9 ? 224.2GHz,and the power supply is 1.8V.The output power of the circuit is 3.4 ? 4.8d Bm,the layout area is 0.13mm~2,the power consumption of the circuit is 15.15 m W,and the phase noise at a frequency offset of 10 MHz is-102.25 d Bc/Hz.Secondly,a voltage controlled oscillator with a transformer coupling structure is designed.The frequency tuning range is 210.3 ? 226.2GHz,the output power of the circuit is-10 ? 3.7d Bm,the power consumption is 48.9m W,and the phase noise at the frequency deviation of 10 MHz is-100.65 d Bc/Hz,the layout area is 0.22mm~2.2.The millimeter-wave injection-locked frequency divider uses current multiplexing technology.By double-injecting the LC cavity to mix the frequency,the transconductance is improved,thereby increasing the intensity of the injected current and increasing the locking range.The frequency lock range of the injection-locked distributor finally realized is 200 ? 236 GHz,the power supply voltage is 1.8V,the DC power consumption of the circuit is 20.55 m W,and the layout area is 0.16mm~2.
Keywords/Search Tags:SiGe BiCMOS process, HBT varactor, voltage-controlled oscillator, Transformer coupling, injection-locked frequency divider
PDF Full Text Request
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