Research Of Enhancing The Ability Of Anti-Irradiation Of VDMOS Device

With high-speed development of space technology,nuclear technology and strategic weapon technology etc.,more and more high-performance commercial semiconductor devices are used on sputnik,spacecraft,launch vehicle,long-range missile and nuclear weapon.The electronic components,such as VDMOS,thatstructure these electronic devices are inevitable in the environment of strong irradiation,including space irradiation and nuclear irradiation,as a result the electrical parameters of the irradiated semiconductor components will change.The performance of the devices will be destroyed in varying degree,even the components are completely invalid,and then the whole electronic devices is out of work,which seriously affect the reliability and life of the device composed by those components.Therefore,space application put forward higher anti-irradiation requirement for power devices.In addition to the basic design requirements,the electrical parameters of these VDMOS devices will also be demanded to bear the radiation of various high-energy particles and rays in space.It is very important to research the technology of enhancing the ability of anti-irradiation of device.In this paper,the development and demand of anti-radiation VDMOS at home and abroad,the basic structure and working principle of the device are introduced,and the irradiation mechanism is analyzed.Through working principle of the most basic VDMOS devices to the influence of radiation on the silicon based VDMOS all these is introduced.When designing an anti-radiation VDMOS devices,there are many factors that we need to consider,because some of the parameters of the device are mutually restricted.Through a“fixed device design experience and process accumulation”,a general framework for the required devices is formed in general,and then the layout is carried out through appropriate software simulation and the characteristics of the process parameters of the production line,at the same time,the experiment of the related process methods on the process line is carried out.Through optimizing gate(structure etc.),P+body diffusion,N+buffer fasten,termination,late gate process technological improvement,as long as the technological conditions meet the design requirements,the final drawing of the layout is started.In the final production,the process conditions are strictly monitored and improved to ensure good consistency and reliability of the products,finally,the products that meet the requirements[total dose irradiation?100Krad(Si);SEB LET?75MeV/(mg/cm~2);SEGR LET?75MeV/(mg/cm~2)]of the design are produced.This paper is a valuable attempt to combine the design theory with practice,and has a certain reference of significance for the research of semiconductor devices used in the field of anti-irradiation.