The Design Of High-Performance RF Switch

Currently,along with the widespread use of hand-held smart devices such as mobile phones,laptop,mobile communication systems have also evolved from 1G and 2G mobile communication services that can only realize voice call services to 3G and 4G mobile communications and to 5G communications that will soon dominate the market.Every step of the development of information technology has profoundly affected all aspects of our lives.For RF front-end modules?FEMs?,a high-performance RF switch based on 0.13um RF SOI process design is completed in this paper.The main work and research results are as follows:1.With the comparison and analysis of the process characteristics of different RF switches,based on the SOI technology,a single-pole double-throw?SPDT?RF switch single chip and a single-pole 16 throw?SP16T?switch chip design are proposed.The circuit design,layout design and simulation verification under the process of 0.13 um RF PD SOI is completed,and the simulation results meet the design requirements.2.The peripheral auxiliary circuit design of RF switch single chip is completed,including bandgap reference,low dropout linear regulator,oscillator,charge pump and power-on reset circuit.The simulation verification of the above-mentioned circuit modules is completed,and the simulation results meet the design requirements.At the same time,a ESD protection scheme is also given for the RF switch chip designed in this paper.3.The simulation results of single-pole 16-throw RF switch show that the insertion loss is0.477dB and 0.656 dB at 0.9GHz and 1.9GHz,the isolation is 65.04dB and 58.79 dB at0.9GHz and 1.9GHz,respectively.The simulation results of single-pole single-throw RF switch show that the insertion loss is 0.145dB and 0.151dB at 0.9GHz and 1.9GHz,the isolation is 23.96 dB and 18.28 dB at 0.9GHz and 1.9GHz respectively.Both the simulation results meet the design requirements.4.The flow chip test of single-pole double-throw switch chip is completed.The switch exhibited a 0.24 dB insertion loss and 28.9 dB isolation at 0.9GHz.At 1.9 GHz,the switch retained insertion loss and isolation at 0.35 and 22.5 dB,respectively.At 900 MHz,the measured 0.1 dB input compression point(P_0.1dB)reached 36dBm,whereas the 2nd and 3rd harmonics were as low as 64 and 54dBm,respectively,at a 30dBm input power.The measured R_on*C_off value is approximately 120 fs.The test results meet the design requirements,indicating that the RF switch designed in this paper can be used in the RF front-end module of mobile communication system.