Research On Microwave GaN HEMT Physical-Based Large-Signal Model Parameter Extraction

With the gradual increase in the demand for high-rate and high-power output charac-teristics of devices such as communication equipment and radar systems,third-generation semiconductor materials have emerged,and GaN materials are representative of third-generation semiconductor materials.The material has high electron mobility and high breakdown electric field.Compared with silicon-based or silicon carbide-based materi-als,power devices based on GaN material process have broader engineering application prospects in terms of high efficiency and high power.Accurate large-signal model is of great significance for device and circuit design.The nonlinear current-voltage?I-V?model is the core of the large-signal model of the device.The extraction of model parameters is the basis of the large-signal model modeling of the device.Fast and accurate parameter extraction methods not only improve the efficiency of modeling,but also shorten the cycle of circuit design.According to the research on the method of fast extraction of physical model parameters of devices,the research contents of this paper are as follows:1.Research on Extraction Method of I-V Model Parameters of GaN HEMT Equiv-alent Circuit Based on Surface Potential Based on the surface potential theory of GaN HEMT devices,the expression of nonlinear drain-source current I_dsthat can correctly re-flect the characteristics of the device is derived.The small-signal equivalent circuit model of the device is established by using the measured results of small signal and large-signal characteristics of the device.Then a streamlined IV model parameter extraction method is proposed.The main idea of the method is to classify the model parameters according to whether they have clear physical meanings,and then gradually extract them;the spe-cific parameter extraction process is realized by programming,and the extraction results are compared with the measured data to obtain an accurate simulation of the established IV model.The DC characteristics of the device.Then the C-V model of the device is established.Finally,the model is verified by the large signal model of the device,which proves that the parameter extraction method has higher precision.2.Research on Parameter Extraction Method of Large Signal Equivalent Circuit Model of GaN HEMT Based on Zone Division The advantage of the region partitioning model is that the expression of the drain-source current is simple,the model parameters are few,and the simulation convergence is higher.Based on the partition model theory,this paper establishes a large-signal model of the GaN HEMT device with a gate length of0.25um process.The extraction of model parameters is realized by programming.Com-paring the simulation results,the model parameter extraction method has higher precision.In order to further verify the engineering applicability of the model,the model is applied to the circuit analysis of an X-band GaN MMIC power amplifier.The simulation results obtained by the model are in good agreement with the measured results of the power am-plifier,indicating that the model is available.In the design and analysis of the circuit.