Investigation Of The Destruction Mechanism And Protection Circuit Of A Low Noise Amplifier Injected By High Power Microwave

High power microwave(HPM)is first found in a nuclear weapon explosion in America in 1960 s.High power microwave has high frequency(1GHz-300GHz),short pulse duration(dozens of nano-seconds),high power(peak power that is greater than 100MW).Low-noise amplifier is a very important part in modern wireless communication,radar,electronic warfare systems and other applications.Because of the low noise amplifier is vulnerable to high power microwave radiation and easily causes damage and even leads to circuit failure,it is necessary to study the effect of high power microwave damage effects and damage mechanisms of low noise amplifier.This paper first describes the background and the meaning of research on high power microwave,then the paper describe the main characteristics of electromagnetic pulses and the development of the related research of high power microwave.This paper studies the damage mechanism of the high power microwave to devices of different sizes,with an emphasis to high-power microwave weapons breakdown mechanism of power semiconductor devices for a more detailed study and analysis,and finally presents a high-energy electromagnetic pulse effective protection circuit,verified and analyzed by experiment and simulation.