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Design And Achievement Of A High Power PIN Diode

Posted on:2019-02-04Degree:MasterType:Thesis
Country:ChinaCandidate:A J XueFull Text:PDF
GTID:2428330590959942Subject:Integrated circuit engineering
Abstract/Summary:PDF Full Text Request
The PIN diode is a very important control device.It is widely used in microwave communication,satellite communication,phased array radar and microwave measurement technology.The high power PIN diode has the advantages of this kind of devices in high voltage,high power,high speed and so on.It can be widely used in various high-power situations,such as microwave limiter,microwave switch,microwave phase shifter and electric attenuator.With the requirement of higher power and the development of miniaturization technology,the microwave control circuits using PIN diode put forward higher requirements in the configuration and reliability of the devices.The traditional PIN diode structure,such as glass seal,coaxial and microstrip,has been more difficult to meet the requirements.A new structure of PIN diode is needed.The basic structure and working mechanism of the PIN diode is researched in this paper.By the establishment of the circuit model,the key electrical parameters of the PIN diode are analyzed and calculated.The basic design method and principle of the PIN diode are studied.The structures of the device and the chip are researched.The material and the process are choosed,the method of inspection test and reliability test are analyzed.A best structure of the high voltage and high power is choosed.By the simulation of the chip,the main process parameters of the device are geted,such as thickness of the I layer,depth of the P area,thickness of the chip,and so on.The key technologies of the chip are researched,such as mesa process,passivation process and so on.A one-time sintering method is choosed for the structure,and the yield of assembly is more than 80%.The performance parameters of the product meet the design requirements.The breakdown voltage is over 1000 V,the total capacitance is less than 1.1pF,the series resistance is less than 0.4?,the carrier lifetime is longer than 4?s,and the thermal resistance is less than 12?/W.The product meet the requirements of the the reliability testing and the experiment of the customer.
Keywords/Search Tags:high power, PIN, mesa structure, thermal design
PDF Full Text Request
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