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Research On Series-parallel Connection Of Solid-state Switching IGBT In Pulse Power System

Posted on:2020-08-16Degree:MasterType:Thesis
Country:ChinaCandidate:X G ZhuFull Text:PDF
GTID:2428330590496732Subject:Physical Electronics
Abstract/Summary:PDF Full Text Request
The increasingly widespread application of pulsed power sources in the field of high power microwaves has determined the direction of power source,and that is compactness,miniaturization,and high repetition rate.The performance of the switch directly affects the output quality of the pulse power source.Semiconductor switches have become a trend because of their superior performance.Insulated Gate Bipolar Transistor in semiconductor devices have the advantages of high current carrying capacity and low resistance,and play a role in many fields.The rated voltage and current of a single IGBT are limited,so IGBTs need to be connected in series and parallel for larger output pulse energy and power,when applied to pulse power sources.Based on theoretical research,this thesis designs the IGBT series-parallel array from the performance of a single IGBT,and verified by physical experiments.First of all,the research background of pulse power source is introduced,the development status of pulse power source based on IGBT and the research history of IGBT series-parallel module are investigated.The basic working principle and characteristics of IGBT,and puts forward the problems that need to be solved in IGBT series-parallel modules and their causes are explained.Secondly,in the basic thesis of IGBT working principle,the IGBT fast driving strategy is explored.The design scheme of the drive circuit is elaborated,and the fast drive circuit based on planar transformer is designed.And then,through a series of experiments,the feasibility,reliability and stability of the drive scheme are proved.In the test,the IGBT can work at 1kV voltage,and the current rise rate can reach 9.41A/ns through the current 470A.In this working environment,the circuit can guarantee stable operation at least 10~7 times at a frequency of 100 Hz.It has been verified that this scheme can be used for IGBT series-parallel arrays.Finally,the structure of the series-parallel array is designed to apply the driving strategy of a single IGBT to the series-parallel module.The design solves the problem of array driving,voltage equalization and current sharing,and makes the array reach the target of 5kV and1.2kA.In addition,the volume of the module is controlled at 135 mm x 125 mm x 35 mm,which will greatly reduce the volume of the pulse power source system.The research conforms to the trend of solidification and miniaturization of pulse power sources...
Keywords/Search Tags:IGBT, Fast drive, Series and parallel, Current rise rate, Compact
PDF Full Text Request
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