W-band Amplifier Research And Design

With the rapid development of radar detection,broadband communication,security inspection and other fields,the electronic system has puts forward requirements for large bandwidth,high gain,and miniaturization of the microwave RF front end.Aiming at the application requiments of millimeter-wave broadband communication and security imaging RF front-end,based on 0.13um SiGe BiCMOS technology,the core amplifier chip of W-band RF front-end,namely power amplifier and low noise amplifier,is developed in this paper.The simulation and some measured results show that the power amplifier and low noise amplifier designed in this paper meet the design requirements and application requirements in key indicators,and have high practical value.The whole design has reference significance for the future development of W-band RF front-end chips.The main research contents and results of this thesis are as follows:1.Design a W-band balanced power amplifier that operates in the 90-100 GHz frequency range.The mechanism of transformer matching is analyzed and summarized,which provides a practical design method for the design of millimeter-wave on-chip transformer,which brings convenience to the input,output and inter-stage match of the millimeter wave amplifier circuit.The design steps and methods of the millimeter wave band power amplifier are summarized.The design steps of the differential quadrature coupler are summarized,and the design experience of the passive components on the millimeter wave band is accumulated.The main points and precautions of the millimeter wave band chip layout design are summarized.The small-signal S-parameters of the chip are measured by a vector network analyzer by developing a chip test plan and drawing a PCB test board.2.Design a W-band fully differential low noise amplifier that operates in the 90-100 GHz frequency range.The design steps and methods of the millimeter wave band low noise amplifier are summarized.The emitter negative feedback match inductor is introduced.The input impedance match is performed under the condition of satisfying the noise requirement,and the input layout structure is optimized.The simulation results show that the low-noise amplifier has a small signal gain of 15.8(94 GHz)and a 3 dB gain bandwidth of 90 G-98.5 GHz.In the entire frequency band,the input return loss is less than-10dB and-12dB at 94GHz,the output return loss is less than-10dB and-18dB at 94GHz,and the reverse isolation is less than-60dB over the entire frequency band.A lower noise figure is achieved in the frequency range of 90-100 GHz,which is 5.9-7.0 dB,and 6 dB at 94 GHz.At 94 GHz,the input 1dB compression point power is-14dBm.Compared with the published W-band low noise amplifier,the low noise amplifier achieves better output performance in the W band.