Research On Floating-gate Type Organic Effect Phototransistor Memory

In the background of fiery big data today,the rapid development of information technology puts higher requirements on data storage,such as storage speed,storage density,component size,mechanical flexibility,manufacturing process,and cost.The development trend of high-performance organic field-effect transistor memory satisfies the above requirements.There are a large number of researchers starting with the device structure of the organic field effect transistor memory,the material and the film morphology of each functional layer of the device,and controlling the performance of the organic field effect transistor memory.This thesis starts with the material,finds the suitable device structure,controls the shape of the thin film on this basis,promotes the storage performance of the device,and utilizes the light-assisted means to study the influence of the photosensitive material on the device.The main research contents and results are as follows:First,we used CsPbCl₃ quantum dot material to dope with PS.The hybrid floating-gate device structure was used to explore the effect on the device's memory performance.Experiments show that after doping CsPbCl₃ quantum dots,the nanoparticle can be used as an independent charge storage.The unit saves a certain amount of power,and the device's storage performance is significantly improved.On this basis,the absorption spectra of CsPbCl₃ QDs were analyzed to observe the effects of different wavelengths of light on the storage performance of the device.It was found that the device will shift under the irradiation of 365 nm wavelength,while the light at550 nm and 650 nm is Not under the same conditions.Secondly,we chose a more mature PbS QDs material as a charge storage layer.Based on the study of CsPbCl₃ QDs,the use of PbS QDs has the advantages of a large storage window.The Effect of Wavelength Light on Floating Gate Organic Field Effect Transistor Memory Based on PbS Quantum Dots Three different wavelengths of light at 420 nm,550 nm,and 650 nm were used for testing and comparison.It was found that under the same gate voltage,the offset was most obvious at 420 nm,and the 650nm was the weakest,which was mainly related to PbS.The absorption peaks of quantum dots are related to different light energy of different wavelengths under the same light intensity.Finally,on the basis of summarizing the preparation of the above two kinds of inorganic quantum dot materials,inorganic quantum dot materials are replaced with PVK,and PVK has advantages such as excellent hydrophobicity,surface energy and pentacene crystallization,and good film forming properties.PS/PVK is used as a hybrid floating-gate layer,which uses the stability and tolerance of PS and good storage characteristics of PVK to improve the device's storage window while improving the stability and tolerance of the device.Experiments show that under the condition of 5:1PS and PVK doping,the device has better stability and tolerance on the basis of larger storage window.