Study On Hybrid Electret For High Performance Organic Field-Effect Transistor Memory

With the advent of the Internet of Things and big data,higher functional and integrated requirements are put forward for the memory.Organic field-effect transistor(OFET)memory has attracted extensive attention due to their advantages of low cost,non-destructive readout,easily integrated with electronic circuits and large-area flexible preparation.In recent years,in order to develop high-capacity and high-stability OFET memories,researchers have devoted themselves to the development of new charge storage materials,optimization of device structures,and regulation of interface morphology.However,the performance of the memory devices like storage capacity and storage stability still need to be improved.This dissertation selects a new type of hybid molecular as the research object,and explores its influence on device performance from the aspects of film morphology,device structure.The main research contents and results are as follows:The first part of this dissertation explores the effects of CSPS-1 and CSPS-2 which clusters is cored with different lengths of star-shaped PS on the memory performance.The results show that with the increase of side-chain PS,the carrier mobility,the storage window as well as the storage density performs better,and the device shows a more stable retention characteristic and more reliable endurance ability.Therefore,the CSPS-2 with better storage performance is selected as the interface morphology and device structure optimization research object.In addition,it was further proved that the core Co W has a strong ability to trap holes,and the side chain PS has a strong ability to trap electrons through comparative experiments of simple PS thin film devices.The devices shows the bipolar storage performance and prevents the charge escaping effectively.The second part of this dissertation develops uniform distribution and highly ordered nanocolumns by spin-coating the blend solution of CSPS-2/TMP,and studys the impact of nanocolumns structure on storage performance.Compared to the CSPS-2 thin-film device,the CSPS-2 nanocolumns device shows a larger positive memory window of 49.52 V,a smaller negative memory window of 28.05 V,and the current ratio also reduces by two orders of magnitude.Therefore,it is not conducive to achieving a stable and reliable memory device.In the final part of this dissertation explores the ability of OFET memory based on the structure of double heterojunction Pentacene/P13.N-type organic semiconductor materials are introduced to increase the electron concentration between channels,and device based on this structure realizes bipolar storage in the darkness.By comparing the storage performance of the device based on Pentacene/C60 structure and Pentacene/P13 structure,it is found that the device based on Pentacene/P13 structure shows a larger storage window and more stable retention characteristic.In addition,the effect of thickness effect on the memory performance of the memory device is further studied.The result shows that as the thickness of P13 increases,the bipolar performance of the transistor is significantly improved,and the storage window also increases.But the ability to maintain the charge stability drastically reduced.