Simulation Research On Information Storage Mechanism Of P-MTJ STT-MRAM

Magnetic Random Access Memory(Magnetic Random Access Memory,MRAM)is a new type of nonvolatile Memory,with a small cross-sectional area,low power consumption,the advantages of the read time is short,it is through the change of the direction of Magnetic thin film Magnetic moment to change the size of its resistance to record different data.With the discovery of the spin transfer torque,can through the polarization current control of magnetic thin film magnetic moment,for information on MRAM,speaking,reading and writing,provides a simple and reliable way to promote further development of magnetic random access memory to spin transfer torque of the magnetic random access memory(spin transfer torque magnetic random access memory,the STT-MRAM)phase.In-plane STT-MRAM in the storage market has made some achievements,compared with the vertical anisotropy STT-MRAM storage size smaller and make the free layer flip the threshold current density of smaller magnetic moment,at the same time,with good thermal stability,meet the demand of the development of future normalized random access memory.The article to the vertical anisotropy STT-MRAM information written to the simulation.In the first chapter mainly introduces the classification of storage,the STT-information storage principle of MRAM,presented in recent years the researchers to have a vertical anisotropy magnetic tunnel junction material close to explore process,obtained some research results.The second chapter ferromagnetic materials are studied by micro magnetic simulation of the energy.Third chapter for circular membrane model,the establishment of a free in the spin torque under the action of magnetic layer of magnetic moment into the equation of motion,and on the basis of LLGS equation using the fourth order Runge-Kutta method of the magnetic moment of the free layer precession trajectory simulation was realized.The fourth chapter according to the parameters of the selected material,analyzed the current density,saturation magnetization intensity,damping coefficient,anisotropy constant influence on free layer flip magnetic moment,the result can be developed for vertical anisotropy of STT-MRAM.Finally,the simulation summarizes and prospects the further research content.