The Development Of Silicon Photomultiplier In 0.18?m Standard CMOS Technology

The low photon flux detection technology is widely applied to all the critical fields associated with the modern society,including homeland security,space exploration,industrial manufacture,medical healthcare,scientific research,etc.Benefitted from the single photon level sensitivity,high photon detection efficiency,high gain,low operation voltage,rapid response,compactness,and robustness,a novel semiconductor photodetector,so-called silicon photomultiplier(SiPM),could be the best candidate to break through the limitations of traditional detectors and promote the rapid development of low photon flux detection technology.The SiPM implemented in the complementary metal oxide semiconductor(CMOS)technology shows high uniformity and low cost,which are the critical points in large volume application.The CMOS SiPM also shows the possibility to integrate the sensor and intelligent circuit on the same chip.The obstacle to implement SiPM in CMOS technology is that the design flow and process feature are dedicated to field effect transistor without optimization or guidance for the SiPM device.The mainstream of CMOS SiPM development is by trial and error method,which is blind,expensive,and inefficient.A set of comprehensive mathematics models considering physics mechanism and technology feature are needed as the guidance for CMOS SiPM design and optimization.In this thesis,the dedicated numerical simulation method is built on the basis of the physical mechanism of SiPM,and the CMOS SiPM is designed and implemented by Multi-Project Wafer run in 0.18?m standard CMOS technology with numerical simulation guidance.A clearly visible single photon spectrum is achieved at 25?.The CMOS SiPM is characterized as 2×10~4 kHz/mm~2 dark count rate,0.4 cross-talk probability,1.406×10~6 gain,and 23.4%single photon resolution with 2 V overvoltage.The heart rate of the human being is measured using CMOS SiPM as an insulation of primary application.