Thermal Characteristics Of 808nm High Power Semiconductor Laser Package

Semiconductor lasers are widely used in laser pumping,industry,medical treatment,military and other fields.With the continuous improvement of the output power of high-power semiconductor lasers,the heat generated is also gradually increasing,and the heat problem has become the focus of research.How to improve the output power,reduce the threshold current and reduce the heat generation has become an important research direction.In this paper,the steady-state thermal analysis and thermal stress analysis of 808 nm band high-power semiconductor laser single tube device are carried out by ANSYS Workbench software.The main contents of this paper are as follows:First,for the c-mount encapsulated thermal sink structure,a new Si C material is added as the transition thermal sink.ANSYS software was used to conduct theoretical simulation and comparative analysis on the transition heat sink structure without adding and the transition heat sink structure with Si C,optimize the structure parameters and determine the optimal transition heat sink size.The theoretical simulation results show that the junction temperature and thermal resistance of Si C transition heat sink single-tube device are reduced,the thermal stress is reduced and the output power is significantly increased.Secondly,the high power single-tube devices are encapsulated for the double-hole large anaerobic copper thermal sink structure.ANSYS software was used to analyze the influence of solder layer thickness on the heat dissipation effect of the laser and determine the optimal structure parameters.With this solder thickness,the thermal characteristics of the laser were improved by two transition heat-sink materials,Al N and Wu Cu,respectively.The simulation results showed that the thermal resistance,stress and output power of the transition device with Al N were low.Finally,according to the theoretical simulation results and the optimized design size,the packaging test and evaluation of two single tube devices with heat-sink structure were carried out.The test results showed that the output power of Si C transition material increased by 11.4%,the wavelength redshift decreased by 2.6nm,and the thermal resistance decreased by 0.46?/W compared with c-mount without transition heat sink.For single-tube devices with large anoxic copper thermal sink package structure,adding Al N transition thermal sink increases the output power by 9% compared with adding Wu Cu transition thermal sink,the wavelength redshift is less than 1.3nm,and the thermal resistance is reduced by 0.35?/W.The test results show that adding designed Si C transition heat sink into the c-mount package can improve the cooling effect and performance of semiconductor lasers.Encapsulated in large oxygen-free copper with optimized solder thickness,adding Al N transition heat sink has better thermal characteristics,lower thermal resistance and more stable wavelength than adding Wu Cu.This paper provides the theoretical basis and solutions for the subsequent analysis of the thermal characteristics of semiconductor lasers.