Study Of Single Event Effects Induced By Medium Energy Proton In Ferroelectric Random Access Memory

Ferroelectric Random-Access Memory?FRAM?is one of new-type memories,and it applied in all walks of life.FRAM,a hot choice of memorial devices,is featured as higher write/read speed,lower electric consumption,mountain-higher write/read times than other memories.In addition to,the unique storage mechanism makes FRAM performed so excellent that its space application looks promising.As a result,researches about FRAM's anti-radiation performance catch the public's eye ever more.Since proton that brings damage to electrical devices accounts for a large proportion and exists almost everywhere in space radiation environment,the effect of FRAM influenced by proton radiation can't be ignored.So,it's meaningful to study the single event effect of FRAM under proton radiation.The single event effect experiments,based on off-the-shelf FRAM,under middle energy proton's radiation were illustrated in this dissertation.Meanwhile,Geant4 code was used to evaluate the interaction processes between proton and device structure.Those works including:1.The experiment aims to Single Event Functional Interruption?SEFI?was carried out.We analyzed the SEFI from proton radiation and signal disruption.Results shown that SEFIs occurred in FRAM under proton radiation,and the occurrence is triggered by an electrical disruption generated in the chip's circuit.A micro latch up in peripheral circuit of device can also induce SEFI under heavy ions and laser radiation.2.We studied the Single Event Upset?SEU?effect of FRAM under proton radiation.The upset cross section is acquired,and it reaches to 10^-9 magnitude.Analysis suggested that protons blow 100 MeV won't make FRAM peripheral circuit exception to trigger SEU.3.The multi-metal-layer structure of FRAM was modeling using geant4 code.We evaluated the interaction process between protons and the high-Z material and explained the reason on particle track propagating.The integral cross section of detector caused by energy deposited in sensitive volume under different energy proton radiation was obtained.The energy deposition distribution and secondary particles in sensitive volume under proton radiation was counted.