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Research On V-band Power Synthesis Amplifier Based On Gap Waveguide

Posted on:2018-06-28Degree:MasterType:Thesis
Country:ChinaCandidate:C Y HeFull Text:PDF
GTID:2358330512978447Subject:Communication and Information System
Abstract/Summary:PDF Full Text Request
The millimeter wave solid-state power amplifier is an essential component in millimeter wave transmitter system.In order to pursue miniaturization,high power and broadband characteristics,based on the research of V-band power combining technique and ridge gap waveguide technology,this paper presents a new scheme of V-band power combining amplifier,which has low loss,broadband,miniaturization and good heat dissipation.The basic theory of EBG structure and RGW is first introduced in detail and the similarities and differences between EBG structure and electromagnetic soft and hard surface are analyzed.Based on waveguide transmission method and dispersion diagram,the dispersion characteristics of the pin-type EBG structure are analyzed by HFSS,which verifies its bandgap characteristics.A novel V-band RGW-RW conversion structure is proposed secondly,which is applicable to the whole V-band.Simulation results show that,in the 51GHz-82GHz,S11 is below-20dB with the relative bandwidth of 46.6%.Simultaneously,a V-band RGW-microstrip conversion structure is designed.Simulation results show that in the 50GHz-75GHz,S11 is below-20dB,with the relative bandwidth of 40%.The feasibility of the two conversion schemes is verified by the measurement of 1-way back-to-back passive structure and the single amplifier.Then the V-band microstrip power divider,waveguide branching bridge and RGW power divider are analyzed and compared.The V-band RGW 2-way power divider and 4-way power divider are designed.Simulation results show that,for the RGW 2-way power divider,S11 is below-20dB in the entire V-band.For the 4-way power divider,in the 51GHz-68GHz S11 is less than-20dB.The feasibility of the RGW power divider is verified by the measurement of the 2-way power dividing-combining network.At last,based on the design and research of bias circuit,dielectric substrate and MMIC chip,a V-band RGW 4-way power combining amplifier is proposed and simulated,and its performance is predicted.The simulation results of the 4-way power dividing-combining network show that,in the 53GHz-65GHz,S11 is below-15dB,loss is in 0.29dB or less.At the same time,the cavity structure of the amplifier is designed and the thermal simulation of the amplifier is carried out.The result proves that the scheme has good heat dissipation.In this paper,the RGW power amplifiers is explored,which is of positive significance for the application of RGW in active devices.
Keywords/Search Tags:V-band, power combining amplifier, ridge gap waveguide, broadband
PDF Full Text Request
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